The importance and status of the memory in your computer after the CPU, the pros and cons of their quality has an important impact on computer performance. In order to give full play to the potential of memory, memory-related parameters in the BIOS settings to be adjusted. Below for the slightly older support Intel Pentium III, Celeron II processor, Intel 815E/815EP chipset, VIA (VIA) 694X chipset and support for AMD the Thunder bird (Thunderbird) and Duron (Duron) processor, the VIA KT133 / 133A chipset, introduced in the Award BIOS 6.0 memory optimization settings. Award BIOS for the use of the older chipset motherboard and low memory settings is relatively less, but the battery for MOTOROLA GP320 settings described in this article also apply.
Intel 815E/815EP chipset
In the Advanced Chipset Features (Advanced Chipset Features), this type of motherboard BIOS settings page generally contains the following memory settings:
Set SDRAM, Timing By SPD (determined according to SPD memory timings)
Options: Disabled, the Enabled.
The SPD (Serial Presence Detect) is a small memory chip that stores the memory parameter information. If you use a quality brand memory, the DRAM Timing By SPD set the Enabled, this time, go without BIOS memory parameters described below to set up the system will automatically determine the operating parameters of the memory according to the data in the SPD. Some compatible memory SPD is empty or feel certain brands of memory parameters of the SPD is more conservative, and want to fully tap its potential, you can set this parameter to Disabled, this time, the following HP 360136-001 battery pack memory parameters can be adjusted.
SDRAM CAS Latency Time (memory CAS latency time) options: 2,3.
Memory CAS (Column Address of Strobe, Column Address Strobe) latency time control of SDRAM memory receives a data read command to wait for the number of clock cycles before the actual implementation of the directive. This parameter also determines the number of clock cycles to complete the first part of the transmission burst transmission process in the first memory. This parameter is smaller, the faster the speed of the memory. In the 133MHz frequency, the general quality compatible memory mostly can only be run under CAS = 3, the run will make the system unstable under the CAS = 2, data loss can not even start. CAS latency is a very important parameter for memory, the greatest impact on computer performance, Intel and VIA PC133 memory specification differences with this parameter, the Intel PC133 memory should be able to stabilize running on the 133MHz frequency, CAS = 2 VIA PC133 memory stable operation in the 133MHz frequency can not specified the CAS value, so Intel’s specifications are more stringent, and generally only brand of memory to be able to meet this specification, so we feel that Intel motherboards to pick replacement Aspire 5315 Battery memory.
SDRAM, Cycle Time Tras / Trc, (memory Tras / Trc clock cycle) Options: 5/7, 7/9.
This parameter is used to determine the SDRAM memory row activation time and number of clock cycles of the line cycle time. Tras on behalf of the SDRAM row activation time (Row Active Time), it is open line unit the number of clock cycles needed for data transmission. Trc on behalf of the SDRAM row cycle time (Row Cycle Time), it is the number of clock cycles needed by the line unit to open and line unit refresh, including the entire process. For best performance consider this parameter is set to 5/7, when the memory is faster, but there may be affect the data transmission line unit open time in SDRAM memory operating frequency higher than 100MHz is particularly so, even if it is brand memory most of the bear can not be so harsh settings.
SDRAM, the RAS-TO-CAS Delay (memory row address transmitted to the column address delay time) options: 2,3.
This parameter can control the SDRAM row address strobe (RAS, Row Address of Strobe) signal and column address strobe signal delay. SDRAM read, write or refresh operation, you need to insert a delay clock cycle between the two pulse signals. For best performance consider this Battery Grip for Canon BG-E6 parameter is set to 2, if the system can not and stable operation can set this parameter to 3.
SDRAM, the RAS Precharge Time (memory row address strobe precharge time) options: 2,3.
This parameter can be controlled prior to SDRAM refresh operation is needed to row address strobe precharge clock cycle number. Pre-charging time will be set to 2 can improve the performance of the SDRAM, but if the two clock cycle precharge time, the SDRAM will not work properly complete the refresh operation can not keep the data.
Memory Hole, At 15M-16M (located in 15M 16M memory reserved area) options: Disabled, Enabled.
Some special normal work of the ISA expansion cards need to use is located in 15M ~ 16M memory region, this parameter is set to Enabled, the memory area reserved to such ISA expansion card. PC’99 specification no longer supports ISA expansion slot, so new motherboard generally do not have ISA slots, and thus should be the parameter is set to Disabled.
System Memory Frequency (system memory frequency) options: the AUTO, 100MHz, 133MHz.
This setting memory asynchronous operation and Solar Panel Charger for Laptop management functions. AUTO: automatically set according to the characteristics of the memory, the memory operating frequency; 100MHz: memory, forced to set to work in the 100MHz frequency; 133MHz: memory, forced to set to work in the 133MHz frequency.
Memory Parity / ECC Check (memory parity / ECC) options: Disabled, Enabled.
If your system uses ECC memory, this parameter is set to the Enabled, otherwise this parameter is set to Disabled. ECC said error checking and correcting (Error Checking and Correction.) general of the capabilities of high-end server memory, this memory with ECC capabilities memory particles, enabling the system to detect and correct a data error in memory or detected in the two data error. ECC capabilities to improve data integrity
And system stability, especially important for servers, but the ECC will cause some performance loss
VIA ® chipset motherboard
Aspire 7735Z VIA chipset motherboard is generally to be rich than the Intel chipset motherboard memory setting options in the Advanced Chipset Features (Advanced Chipset Features), this type of motherboard BIOS settings page typically includes the following memory settings:
Bank 0/1, 2/3, 4/5 DRAM Timing (memory speed settings) Options: Turbo (High Speed), Fast (fast), Medium (medium), Normal (normal), SDRAM, 8/10 ns.
This option is used to set the memory speed, SDRAM memory, is set to SDRAM, 8/10 ns can be.
SDRAM, the Clock (memory clock frequency) options: HOST CLK, the HCLK +33 M (or the HCLK-33M).
This parameter is set asynchronous mode of operation of the memory. HOST the CLK to the memory operating frequency is equal to the FSB of the system, the HCLK +33 M indicates the memory operating frequency is equal to the system bus coupled with 33MHz, the HCLK-33M memory operating frequency is equal to the system FSB minus 33MHz. Such as the Pentium III 800EB, the BIOS automatically make the parameter options appear HOST CLK, and the HCLK-33M, If you are using PC133 memory, this parameter is set to HOST the CLK, if you are using PC100 memory, you can set this parameter to the HCLK- 33M, this would enable the system with the lower performance of PC100 memory. Memory asynchronous feature allows the system to enhance memory compatibility is more obvious, the VIA chipset, an important function.
Of Bank Interleave (Memory Bank staggered) options: Disabled, 2-Bank ,4-Bank.
Memory interleaving to interleave appear on all sides of the SDRAM memory refresh clock signal and the read and write clock signal, which can achieve the CPU to read and write at the same time to refresh a memory surface to another memory surface, so you do not have to spend dedicated time to each face memory refresh. And the CPU is about to visit a bunch of memory addresses are located in different memory surface, the surface of the memory is interleaved so that the CPU can achieve a memory surface while back a memory surface to send address to receive data, resulting in a pipelined effect, increase the bandwidth of SDRAM memory. Therefore, some people even think that the memory interleaving is enabled for system performance improvement is even larger than the memory camcorder battery CAS latency changed from 3 to 2.
However, memory interleaving memory is a more advanced setup options, the VIA 694X chipset motherboard BIOS version older, may not have this setting, then you can upgrade the motherboard BIOS. If have not yet seen the latest version of the BIOS settings, it is only through some VIA chipset memory BANK staggered open software, such as WPCREdit and the corresponding plug-ins (from “drive home” site to download) to modify the Northbridge chip. register, thus opening the memory interleaving mode.
SDRAM, Driver Strength (strength) of the memory access signal options: Auto, Manual.
This option is used to control the memory access signal strength. Under normal circumstances this option set to Auto, the chipset to assume control of the memory access signal strength and automatically adjust the memory access signal strength relative to adapt to the memory installed on your computer. If you need to overclock or troubleshooting your computer, the parameter is set to Manual, then you can manually adjust SDRAM Driver value (memory access signal strength value) value.
SDRAM, Driver is the value (memory access signal strength value) options: 00 to FF (hexadecimal).
This option determines the memory access signal strength value. Should be noted that the SDRAM, CANON Camera battery Driver is Strength option is set to Manual, the value of the SDRAM, Driver is value is valid. SDRAM, Driver is value range hex 00 to FF, the greater its value, the memory access signal strength is greater. Memory operating frequency is more sensitive, when the operating frequency higher than the nominal frequency of the memory, the value of the option to increase, you can improve the stability of the computers in the overclocked state. This approach did not increase the memory voltage (with some overclocking powerful motherboard can adjust the memory voltage), but still increase the value of the SDRAM, Driver is value to be very careful to avoid damage of the memory.
Fast RW Turn Around (fast read and write conversion) Options: Enabled, Disabled.
When the CPU to start memory read data and write data to memory, usually there is an additional delay, this parameter can reduce the delay between the conversion of this to read and write. This parameter is set to Enabled, the conversion delay can reduce the memory read and write, so that the memory is transferred from the read state to write the state faster. However, if the memory is not fast read-write conversion will result in data loss and system instability, then this parameter is set to Disabled.
Note: in the ACER laptop battery BIOS memory optimization settings may be the stability of the computer running will cause adverse effects, it is proposed memory optimization, be sure to use the test software to test computer stability and speed. If you have no confidence in their memory performance, it is best to take a conservative set, after all, stability is the most important. If the computer often crashes due to memory optimization, restart or program exception error, etc., as long as you clear the CMOS parameters, once again set the system default value can be.
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